M59MR032C120GC6T データシートの表示（PDF） - STMicroelectronics
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M59MR032C120GC6T
STMicroelectronics
M59MR032C120GC6T Datasheet PDF : 49 Pages
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M59MR032C, M59MR032D
Table 22. Device Geometry Definition
Offset Word
Mode
Data
Description
27h
0016h
Device Size = 2n in number of bytes
28h
0001h
Flash Device Interface Code description: Asynchronous x16
29h
0000h
2Ah
2Bh
0000h
0000h
Maximum number of bytes in multi-byte program or page = 2n
2Ch
0003h
Number of Erase Block Regions within device
bit 7 to 0 = x = number of Erase Block Regions
M59MR032C
M59MR032C
Note:1. x = 0 means no erase blocking, i.e. the device erases at once in "bulk."
2. x specifies the number of regions within the device containing one or more
contiguous Erase Blocks of the same size. For example, a 128KB device
(1Mb) having blocking of 16KB, 8KB, four 2KB, two 16KB, and one 64KB is
considered to have 5 Erase Block Regions. Even though two regions both
contain 16KB blocks, the fact that they are not contiguous means they are sep-
arate Erase Block Regions.
3. By definition, symmetrically block devices have only one blocking region.
Erase Block Region Information
2Dh
002Fh
bit 31 to 16 = z, where the Erase Block(s) within this Region are (z) times 256 bytes in
2Eh
0000h
size. The value z = 0 is used for 128 byte block size.
2Fh
0000h
e.g. for 64KB block size, z = 0100h = 256 => 256 * 256 = 64K
30h
0001h
bit 15 to 0 = y, where y+1 = Number of Erase Blocks of identical size within the Erase
31h
000Eh
Block Region:
32h
0000h
e.g. y = D15-D0 = FFFFh => y+1 = 64K blocks [maximum number]
y = 0 means no blocking (# blocks = y+1 = "1 block")
33h
0000h
Note: y = 0 value must be used with number of block regions of one as indicated
34h
0001h
by (x) = 0
35h
0007h
36h
0000h
37h
0020h
38h
0000h
M59MR032D M59MR032D
2Dh
0007h
2Eh
0000h
2Fh
0020h
30h
0000h
31h
000Eh
32h
0000h
33h
0000h
34h
0001h
35h
002Fh
36h
0000h
37h
0000h
38h
0001h
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