M59MR032C120GC6T データシートの表示（PDF） - STMicroelectronics

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M59MR032C120GC6T

32 Mbit (2Mb x16, Mux I/O, Dual Bank, Burst) 1.8V Supply Flash Memory

STMicroelectronics 

M59MR032C, M59MR032D

Table 24. Burst Read Information

Offset

Data

(P+F)h = 48h 0003h Page-mode read capability

Description

(P+10)h = 49h

(P+11)h = 4Ah

0003h

0001h

bits 0-7

’n’ such that 2n HEX value represents the number of read-page

bytes. See offset 28h for device word width to determine page-

mode data output width. 00h indicates no read page buffer.

Number of synchronous mode read configuration fields that follow. 00h indicates no

burst capability.

Synchronous mode read capability configuration 1

(P+12)h = 4Bh

(P+13)h = 4Ch

(P+14)h = 4Dh

(P+15)h = 4Eh

0002h

0007h

0036h

0001h

bit 3-7

bit 0-2

Reserved

’n’ such that 2n+1 HEX value represents the maximum number of

continuous synchronous reads when the device is configured for its

maximum word width. A value of 07h indicates that the device is

capable of continuous linear bursts that will output data until the

internal burst counter reaches the end of the device’s burstable

address space. This field’s 3-bit value can be written directly to the

read configuration register bit 0-2 if the device is configured for its

maximum word width. See offset 28h for word width to determine

the burst data output width.

Synchronous mode read capability configuration 2

Synchronous mode read capability configuration 3

Max operating clock frequency (MHz)

Supported handshaking signal (WAIT pin)

bit 0

during synchronous read

bit 1

during asynchronous read

(1 = Yes, 0 = No)

(1 = Yes, 0 = No)

Table 25. Security Code Area

Offset

Data

81h

XXXX

82h

XXXX

64 bits: unique device number

83h

XXXX

84h

XXXX

Description

26/49

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