M59MR032C100GC6T データシートの表示（PDF） - STMicroelectronics

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M59MR032C100GC6T

32 Mbit (2Mb x16, Mux I/O, Dual Bank, Burst) 1.8V Supply Flash Memory

STMicroelectronics 

M59MR032C, M59MR032D

Table 1. Signal Names

A16-A20

Address Inputs

ADQ0-ADQ15

Data Input/Outputs or Address

Inputs, Command Inputs

E

Chip Enable

G

Output Enable

W

Write Enable

RP

Reset/Power-down

WP

Write Protect

K

Burst Clock

L

Latch Enable

WAIT

Wait Data in Burst Mode

BINV

Bus Invert

VDD

Supply Voltage

VDDQ

Supply Voltage for Input/Output

Buffers

VPP

Optional Supply Voltage for

Fast Program & Erase

VSS

Ground

DU

Don’t Use as Internally Connected

DESCRIPTION

The M59MR032 is a 32 Mbit non-volatile Flash

memory that may be erased electrically at block

level and programmed in-system on a Word-by-

Word basis using a 1.65V to 2.0V VDD supply for

the circuitry. For Program and Erase operations

the necessary high voltages are generated inter-

nally. The device supports synchronous burst read

and asynchronous page mode read from all the

blocks of the memory array; at power-up the de-

vice is configured for page mode read. In synchro-

nous burst mode, a new data is output at each

clock cycle for frequencies up to 54MHz.

The array matrix organization allows each block to

be erased and reprogrammed without affecting

other blocks. All blocks are protected against pro-

gramming and erase at Power-up. Blocks can be

unprotected to make changes in the application

and then reprotected.

Instructions for Read/Reset, Auto Select, Write

Configuration Register, Programming, Block

Erase, Bank Erase, Erase Suspend, Erase Re-

sume, Block Protect, Block Unprotect, Block Lock-

ing, CFI Query, are written to the memory through

a Command Interface (C.I.) using standard micro-

processor write timings.

The memory is offered in LFBGA54 and µBGA46,

0.5 mm ball pitch packages and it is supplied with

all the bits erased (set to ’1’).

Table 2. Absolute Maximum Ratings (1)

Symbol

Parameter

Value

Unit

TA

Ambient Operating Temperature (2)

–40 to 85

°C

TBIAS

Temperature Under Bias

–40 to 125

°C

TSTG

Storage Temperature

–55 to 155

°C

VIO (3)

Input or Output Voltage

–0.5 to VDDQ+0.5

V

VDD, VDDQ Supply Voltage

–0.5 to 2.7

V

VPP

Program Voltage

–0.5 to 13

V

Note: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may

cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions

above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating condi-

tions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant qual-

ity documents.

2. Depends on range.

3. Minimum Voltage may undershoot to –2V during transition and for less than 20ns.

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