M29DW323DB70N1 データシートの表示（PDF） - STMicroelectronics

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M29DW323DB70N1

32 Mbit (4Mb x8 or 2Mb x16,Dual Bank 8:24, Boot Block) 3V Supply Flash Memory

STMicroelectronics 

M29DW323DT, M29DW323DB

operation. During Program or Erase operations

Ready/Busy is Low, VOL. Ready/Busy is high-im-

pedance during Read mode, Auto Select mode

and Erase Suspend mode.

After a Hardware Reset, Bus Read and Bus Write

operations cannot begin until Ready/Busy be-

comes high-impedance. See Table 19. and Figure

16., Reset/Block Temporary Unprotect AC Wave-

forms.

The use of an open-drain output allows the Ready/

Busy pins from several memories to be connected

to a single pull-up resistor. A Low will then indicate

that one, or more, of the memories is busy.

Byte/Word Organization Select (BYTE). The

Byte/Word Organization Select pin is used to

switch between the x8 and x16 Bus modes of the

memory. When Byte/Word Organization Select is

Low, VIL, the memory is in x8 mode, when it is

High, VIH, the memory is in x16 mode.

VCC Supply Voltage (2.7V to 3.6V). VCC pro-

vides the power supply for all operations (Read,

Program and Erase).

The Command Interface is disabled when the VCC

Supply Voltage is less than the Lockout Voltage,

VLKO. This prevents Bus Write operations from ac-

cidentally damaging the data during power up,

power down and power surges. If the Program/

Erase Controller is programming or erasing during

this time then the operation aborts and the memo-

ry contents being altered will be invalid.

A 0.1µF capacitor should be connected between

the VCC Supply Voltage pin and the VSS Ground

pin to decouple the current surges from the power

supply. The PCB track widths must be sufficient to

carry the currents required during Program and

Erase operations, ICC3.

VSS Ground. VSS is the reference for all voltage

measurements. The device features two VSS pins

which must be both connected to the system

ground.

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