LHF32K10 データシートの表示（PDF） - Sharp Electronics

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LHF32K10

Flash Memory 32M (4MB × 8 / 2M × 16)

Sharp Electronics 

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LHF32K10

13

4.5 Query Command

Query database can be read by writing Query

command (98H). Following the command write, read

cycle from address shown in Table 7~11 retrieve the

critical information to write, erase and otherwise

control the flash component. A0 of query offset

address is ignored when X8 mode (BYTE#=VIL).

Query data are always presented on the low-byte

data output (DQ0-DQ7). In x16 mode, high-byte

(DQ8-DQ15) outputs 00H. The bytes not assigned to

any information or reserved for future use are set to

"0". This command functions independently of the

VPP voltage. RP# must be VIH.

Table 6. Example of Query Structure Output

Mode

Offset Address

Output

DQ15~8 DQ7~0

A5, A4, A3, A2, A1, A0

1 , 0 , 0 , 0 , 0 , 0 (20H) High-Z "Q"

X8 mode 1 , 0 , 0 , 0 , 0 , 1 (21H) High-Z "Q"

1, 0 , 0 , 0 , 1 , 0 (22H) High-Z "R"

1 , 0 , 0 , 0 , 1 , 1 (23H) High-Z "R"

A5, A4, A3, A2, A1

X16 mode 1 , 0 , 0 , 0 , 0 (10H) 00H "Q"

1 , 0 , 0 , 0 , 1 (11H) 00H "R"

4.5.1 Block Status Register

This field provides lock configuration and erase status for the specified block. These informations are only available

when device is ready (SR.7=1). If block erase or full chip erase operation is finished irregulary, block erase status

bit will be set to "1". If bit 1 is "1", this block is invalid.

Table 7. Query Block Status Register

Offset

(Word Address)

Length

Description

(BA+2)H

01H Block Status Register

bit0 Block Lock Configuration

0=Block is unlocked

1=Block is Locked

bit1 Block Erase Status

0=Last erase operation completed successfully

1=Last erase operation not completed successfully

bit2-7 reserved for future use

Note:

1. BA=The beginning of a Block Address.

Rev. 1.55

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