Philips Semiconductors
1.4 GHz I2C-bus controlled synthesizer
Product specification
TSA5522
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient in free air
SO16
SSOP20
MAX
110
120
UNIT
K/W
K/W
CHARACTERISTICS
VCC1 = 4.5 to 5.5 V; VCC2 = VCC1 to 13.2 V; Tamb = −20 to 85 °C; unless otherwise specified; see note 1
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX
VCC1
supply voltage (+5 V)
4.5
−
VCC2
supply voltage (+12 V)
VCC1
−
ICC1
supply current
−
22
ICC2
supply current
One band switch buffer is ON; −
27
Isource = 20 mA
fRF
RF input frequency
64
−
DR
divider ratio
15-bit frequency word
256
−
5.5
13.5
30
32
1 400
32 767
Crystal oscillator
fxtal
crystal oscillator input
Rxtal = 25 to 300 Ω
frequency
Zxtal
crystal oscillator input
fi = 4 MHz
impedance (absolute value)
3.2
4
4.48
600
1200 −
Prescaler
Vi(RF)
RF input level
VCC1 = 4.5 to 5.5 V; see Fig.4; −25
−
3
fi = 80 to 150 MHz
VCC1 = 4.5 to 5.5 V; see Fig.4; −28
−
3
fi = 150 to 1000 MHz
VCC1 = 4.5 to 5.5 V; see Fig.4; −26
−
3
fi = 1000 to 1400 MHz
PNP band switch buffers outputs
|ILO|
Vo(sat)
output leakage current
output saturation voltage
VCC2 = 13.5 V; Vo = 0 V
Isource = 20 mA; note 1
NPN open-collector outputs P4, P5, P6 and P7; see note 2
−10
−
−
-
0.2
0.5
|ILO|
output leakage current
VCC1 = 5.5 V; Vo = 13.5 V
−
Vo(sat)
output saturation voltage Isink = 20 mA; note 3
−
COL
allowed capacitive loading VOL = 13.5 V
on output pins
−
10
0.2
0.5
10
Input ports P7, P5 and P4; see note 2
VIL
LOW level input voltage
VIH
HIGH level input voltage
−
−
1.5
3
−
−
AS input (Address Selection)
IIH(AS)
HIGH level input current VAS = VCC1
−
−
50
UNIT
V
V
mA
mA
MHz
MHz
MHz
Ω
dB
dB
dB
µA
V
µA
V
nF
V
V
µA
1996 Jan 23
9