CY7C197BN(2011) データシートの表示（PDF） - Cypress Semiconductor

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CY7C197BN
(Rev.:2011)

256-Kb (256 K × 1) Static RAM

Cypress Semiconductor 

256-Kb (256 K × 1) Static RAM

Features

■ Fast access time: 15 ns

■ Wide voltage range: 5.0 V ± 10% (4.5 V to 5.5 V)

■ CMOS for optimum speed and power

■ TTL compatible inputs and outputs

■ Available in 24-pin DIP and 24-pin SOJ

Logic Block Diagram

Input

Buffer

CY7C197BN

256-Kb (256 K × 1) Static RAM

General Description [1]

The CY7C197BN is a high performance CMOS Asynchronous

SRAM organized as 256 K × 1 bits that supports an

asynchronous memory interface. The device features an

automatic power down feature that significantly reduces power

consumption when deselected.

See the Truth Table on page 8 for a complete description of Read

and Write modes.

The CY7C197BN is available in 24-pin DIP and 24-pin SOJ

package(s).

Din

RAM Array

Dout

Column

Decoder

Product Portfolio

Description

Maximum Access Time

Maximum Operating Current

Maximum CMOS Standby Current

Power

Down

Circuit

-15

15

150

10

CE

WE

x Ax

-25

25

95

10

Unit

ns

mA

mA

Note

1. For best practice recommendations, refer to the Cypress application note System Design Guidelines on www.cypress.com.

Cypress Semiconductor Corporation • 198 Champion Court

Document #: 001-06447 Rev. *C

• San Jose, CA 95134-1709 • 408-943-2600

Revised April 6, 2011

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