CY7C197BN(2011) データシートの表示（PDF） - Cypress Semiconductor

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CY7C197BN
(Rev.:2011)

256-Kb (256 K × 1) Static RAM

Cypress Semiconductor 

CY7C197BN

Maximum Ratings

Exceeding the maximum rating may impair the useful life of the

device. These user guidelines are not tested.

Storage Temperature ............................... –65 °C to +150 °C

Ambient Temperature with

Power Applied ......................................... –55 °C to +125 °C

Supply Voltage on VCC to Relative GND ......–0.5 V to +7.0 V

DC Voltage Applied to Outputs

in High Z State[2].................................. –0.5 V to VCC + 0.5 V

DC Input Voltage[2] .............................. –0.5 V to VCC + 0.5 V

DC Electrical Characteristics[2]

Current into Outputs (LOW)......................................... 20 mA

Static Discharge Voltage...............................................2001 V

(per MIL-STD-883, Method 3015)

Latch Up Current .................................................... > 200 mA

Operating Range

Range

Commercial

TemApmebraietunrte[3]

0 °C to 70 °C

VCC

5.0 V ± 10%

Parameter

Description

Condition

VIH

Input HIGH Voltage

VIL

Input LOW Voltage

VOH

Output HIGH Voltage

VCC = Min, IOH = –4.0 mA

VOL

Output LOW Voltage

VCC = Min, lOL = 8.0 mA

IOZ

Output Leakage Current

GND  Vi  VCC, Output Disabled

IIX

Input Leakage Current

GND  Vi  VCC

ICC

VCC Operating Supply

VCC = Max, IOUT = 0 mA,

Current

f = FMAX = 1/tRC

ISB1

Automatic CE Power Down VCC = Max, CE  VIH, VIN  VIH or

Current TTL Inputs

VIN  VIL, f = FMAX

ISB2

Automatic CE Power Down VCC = Max, CE  VCC – 0.3 V,

Current CMOS Inputs

VIN  VCC – 0.3 V or VIN < 0.3 V,

f=0

15 ns

Min

Max

2.2

–0.3

VCC + 0.3

0.8

2.4

–

–

0.4

–5

+5

–5

+5

–

150

–

30

–

10

25 ns

Unit

Min

Max

2.2

–0.3

VCC + 0.3 V

0.8

V

2.4

–

V

–

0.4

V

–5

+5

µA

–5

+5

µA

–

95

mA

–

30

mA

–

10

mA

Capacitance[4]

Parameter

CIN

COUT

Description

Input Capacitance

Output Capacitance

Conditions

TA = 25 °C, f = 1 MHz,

VCC = 5.0 V

Thermal Resistance[4]

Parameter

JA

JC

Description

Thermal Resistance

(Junction to Ambient)

Thermal Resistance

(Junction to Case)

Conditions

Still Air, soldered on a 3 × 4.5

square inches, two-layer

printed circuit board

Max (ALL – PACKAGES)

8

10

24-pin DIP

75.69

33.80

24-pin SOJ

84.15

37.56

Unit

pF

Unit

°C/W

Notes

2. VIL(min) = –2.0 V for pulse durations of less than 20 ns.

3. TA is the “instant on” case temperature.

4. Tested initially and after any design or process change that may affect these parameters.

Document #: 001-06447 Rev. *C

Page 4 of 13

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