CY7C474 データシートの表示（PDF） - Cypress Semiconductor
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CY7C474 Datasheet PDF : 15 Pages
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CY7C470
CY7C472
CY7C474
Switching Characteristics Over the Operating Range[5, 6]
Parameter
Description
tCY
tA
tRV
tPW
tLZR
tDV[7]
tHZ[7]
tHWZ
tSD
tHD
tEFD
tEFL
tHFD
tAFED
tRAE
Cycle Time
Access Time
Recovery Time
Pulse Width
Read LOW to Low Z
Valid Data from Read HIGH
Read HIGH to High Z
Write HIGH to Low Z
Data Set-Up Time
Data Hold Time
E/F Delay
MR to E/F LOW
HF Delay
PAFE Delay
Effective Read from
Write HIGH
7C470–15
7C472–15
7C474–15
7C470–20
7C472–20
7C474–20
7C470–25
7C472–25
7C474–25
7C470–40
7C472–40
7C474–40
Min. Max. Min. Max. Min. Max. Min. Max. Unit
30
30
35
50
ns
15
20
25
40
ns
15
10
10
10
ns
15
20
25
40
ns
3
3
3
3
ns
3
3
3
3
ns
15
15
18
25
ns
5
5
5
5
ns
11
12
15
20
ns
0
0
0
0
ns
15
20
25
40
ns
25
30
35
50
ns
25
30
35
50
ns
25
30
35
50
ns
15
20
25
40
ns
tWAF
Effective Write from
Read HIGH
15
20
25
40
ns
Notes:
5. Test conditions assume signal transmission time of 5 ns or less, timing reference levels of 1.5V and output loading of the specified IOL/IOH and 30-pF load
capacitance, as in part (a) of AC Test Load and Waveforms, unless otherwise specified.
6. See the last page of this specification for Group A subgroup testing information.
7. tHZR and tDVR use capacitance loading as in part (b) of AC Test Loads. tHZR transition is measured at +500 mV from VOL and –500 mV from VOH. tDVR transition is measured
at the 1.5V level. tHWZ and tLZR transition is measured at ±100 mV from the steady state.
4
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