DA121TT1 データシートの表示（PDF） - ON Semiconductor

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DA121TT1

Silicon Switching Diode

ON Semiconductor 

DA121TT1

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Forward Voltage −

(IF = 1.0 mA)

(IF = 10 mA)

(IF = 50 mA)

(IF = 150 mA)

Reverse Current −

(VR = 75 V)

(VR = 75 V, TJ = 150°C)

(VR = 25 V, TJ = 150°C)

Capacitance − (VR = 0, f = 1.0 MHz)

Reverse Recovery Time − (IF = IR = 10 mA, RL = 50 W) (Figure 1)

Stored Charge − (IF = 10 mA to VR = 6.0 V, RL = 500 W) (Figure 2)

Forward Recovery Voltage − (IF = 10 mA, tr = 20 ns) (Figure 3)

Symbol

VF

IR

CD

trr

QS

VFR

Min

Max

Unit

mV

−

715

−

866

−

1000

−

1250

mA

−

1.0

−

50

−

30

−

2.0

pF

−

6.0

ns

−

45

PC

−

1.75

V

1 ns MAX

10%

t

trr

tif

500 W

DUT

50 W

DUTY CYCLE = 2%

90%

VF

100 ns

Irr

Figure 1. Reverse Recovery Time Equivalent Test Circuit

10%

90%

Vf

20 ns MAX

400 ns

VC

VCM

t

VCM

+

Qa

C

500 W DUT

BAW62

D1

243 pF

100 KW

DUTY CYCLE = 2%

OSCILLOSCOPE

R . 10 MW

C 3 7 pF

t

Figure 2. Recovery Charge Equivalent Test Circuit

V

90%

10%

V

120 ns

1 KW

450 W

Vfr

DUT

50 W

t

2 ns MAX

Figure 3. Forward Recovery Voltage Equivalent Test Circuit

DUTY CYCLE = 2%

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