DA108S データシートの表示（PDF） - STMicroelectronics

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DA108S

Diode Array

STMicroelectronics 

Characteristics

1

Characteristics

DA108S1 / DA112S1

Table 1.

Symbol

Absolute maximum ratings (Tamb = 25 °C)

Parameter

Value

Unit

VRRM

IPP

P

Tstg

Tj

TL

Repetitive peak reverse voltage (for one single diode)

Repetitive peak forward current (see Note 1)

Power dissipation

Storage temperature range

Maximum operating junction temperature

Maximum lead temperature for soldering during 10 s.

8/20 µs

200

V

100

A

0.73

W

-55 to + 150 °C

150

°C

260

°C

Note: 1 The surge is repeated after the device returns to ambient temperature

Table 2. Thermal resistances

Symbol

Parameter

Rth (j-a) Junction to ambient

1.

Table 3. Electrical characteristics(Tamb = 25 °C)

Symbol

Parameter

IR

Peak forward voltage

VF

Forward voltage

IR

Reverse leakage current

DA108S1

IPP = 12 A, 8/20 µS

DA112S1

IF = 50 mA

VR = 15 V

Value

170

Unit

°C/W

Max.

Unit

9

V

12

1.2

V

2

µA

2/8

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