DCR1675SA50 データシートの表示（PDF） - Dynex Semiconductor
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DCR1675SA50 Datasheet PDF : 8 Pages
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DCR1675SA
DYNAMIC CHARACTERISTICS
Symbol
Parameter
Conditions
Typ. Max. Units
IRRM/IDRM Peak reverse and off-state current
At VRRM/VDRM, Tcase = 125oC
-
dV/dt Maximum linear rate of rise of off-state voltage To 67% VDRM Tj = 125oC, gate open circuit.
-
dI/dt Rate of rise of on-state current
From 67% V to 1000A Repetitive 50Hz -
DRM
Gate source 30V, 10Ω
tr = 0.5µs to 1A, Tj = 125oC Non-repetitive
-
VT(TO)
Threshold voltage
At Tvj = 125oC
-
rT
On-state slope resistance
tgd
Delay time
I
Latching current
L
At Tvj = 125oC
-
VD = 67% VDRM, Gate source 20V, 10Ω
tr = 0.5µs, Tj = 25oC
-
T = 25oC, V = 5V
-
j
D
I
Holding current
H
T
j
=
25oC,
R
g-k
=
∞
-
500 mA
1000 V/µs
150 A/µs
300 A/µs
1.0
V
0.15 mΩ
1.1
µs
650 mA
200 mA
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
Conditions
VGT
I
GT
VGD
VFGM
VFGN
VRGM
I
FGM
PGM
PG(AV)
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
VDRM = 5V, Tcase = 25oC
VDRM = 5V, Tcase = 25oC
At VDRM Tcase = 125oC
Anode positive with respect to cathode
Anode negative with respect to cathode
Anode positive with respect to cathode
See table, gate characteristics curve
Max. Units
3.5
V
500 mA
0.25 V
30
V
0.25 V
5
V
30
A
150 W
10
W
4/8
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