DCR1675SA50 データシートの表示（PDF） - Dynex Semiconductor
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DCR1675SA50 Datasheet PDF : 8 Pages
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DCR1675SA
100000
Tj = 125˚C
IT = 600A
100 Table gives pulse power PGM in Watts
Pulse Width Frequency Hz
µs
50 100 400
100
150 150 150
200
150 150 125
500
150 150 100
1ms
150 100 25
10ms
10
20 - -
100W
50W
20W
10W
VFGM
10000
1
Upper
Limit
99%
Tj
=
25˚C
1000
0.1
IT
QS
tp = 3ms
dI/dt
IRM
1.0
10
100
Rate of decay of on-state current dI/dt - (A/µs)
VGD
0.1
0.001
Lower Limit 1%
IGD
0.01
0.1
1.0
Gate trigger current, IGT - (A)
IFGM
10
Fig.4 Stored charge
Fig.5 Gate characteristics
0.1
0.01
0.001
125
100
Anode side cooled
I2t
75
Double side cooled
50
I2t = Î2 x t
2
12.5
10.0
7.5
5.0
0.0001
0.001
0.01
Conduction
d.c.
Halfwave
3 phase 120˚
6 phase 60˚
Effective thermal resistance
Junction to case ˚C/W
Double side
0.0065
0.0072
0.0073
0.0076
Anode side
0.0130
0.0137
0.0138
0.0141
0.1
1
10
100
Time - (s)
Fig.6 Transient thermal impedance - junction to case
25
2.5
0
0
1
10 1 2 3 45 10 20 30 50
ms
Cycles at 50Hz
Duration
Fig.7 Surge (non-repetitive) on-state current vs time (with
50% VRRM at Tcase = 125˚C)
6/8
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