SEMICONDUCTOR
4.50
4.00
3.50
3.00
2.50
2.00
1.50
1.00
0.50
0.00
0
Tj=125°C
50
100
12.0
10.0
DCR720E
Upper limit
Tj=25°C
Tj=-40°C
Lower limit
150
200
250
300
350
400
450
500
Gate trigger current IGT, - (mA)
Fig.12 Gate characteristics
PGM=20W
8.0
6.0
A
4.0
2.0
0.0
0.0
B
C
1.0
2.0
3.0
Gate trigger current IGT, - (A)
A is Recommended Triggering Area.
B is Unreliable Triggering Area.
C is Recommended Gate Load Line.
4.0
Fig.13 Gate characteristics
7/9
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