NX29F010 データシートの表示（PDF） - NexFlash -> Winbond Electronics

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NX29F010

1M-BIT (128K x 8-bit) CMOS, 5.0V Only ULTRA-FAST SECTORED FLASH MEMORY

NexFlash -> Winbond Electronics 

NX29F010

TEST CONDITIONS

Table 6. AC Test Specifications

Test Conditions

35 ns AllOthers Unit

Output Load

1 TTL Gate

Output Load Capacitance, CL 30

(including jig capacitance)

100

pF

Input Rise and Fall Times

5

20

ns

Input Pulse Levels

0 to 3.0 0.45 to 2.4 V

InputTimingMeasurement 1.5

Reference Levels

0.8

V

OutputTimingMeasurement 1.5

Reference Levels

2.0

V

DEVICE

UNDER

TEST

CL

Vcc = 5.0V

2.7KΩ

6.2KΩ

Figure 12. Test Setup

AC CHARACTERISTICS: ERASE AND PROGRAM

Std.

Symbol Parameter

tWC Write Cycle Time(1)

-35

Min. Max.

35 —

tAS Address Setup Time

0—

tAH Address Hold Time

30 —

tDS Data Setup Time

15 —

tDH Data Hold Time

0—

tGHWL Read Recovery Time before Write 0 —

(OE HIGH to WE LOW)

tCS CE Setup Time

tCH CE Hold Time

0—

0—

tWP Write Pulse Width

20 —

tWPH Write Pulse Width HIGH

20 —

tWHWH1 Byte Programming Operation(2) 20 —

tWHWH2 Sector Erase Operation(2)

1.0 —

tVCS VCC Setup Time(1)

50 —

-45

Min. Max.

45 —

0—

35 —

20 —

0—

0—

0—

0—

25 —

20 —

20 —

1.0 —

50 —

Note:

1. Not 100% tested.

-55

Min. Max.

45 —

0—

45 —

20 —

0—

0—

0—

0—

30 —

20 —

20 —

1.0 —

1.0 —

-70

Min. Max.

45 —

0—

45 —

30 —

0—

0—

0—

0—

35 —

20 —

20 —

1.0 —

1.0 —

-90

Min. Max. Unit

90 — ns

0 — ns

45 — ns

45 — ns

0 — ns

0 — ns

0 — ns

0 — ns

45 — ns

20 — ns

20 — µs

1.0 — sec

1.0 — µs

16

NexFlash Technologies, Inc.

NXPF001F-0600

06/22/00 ©

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