NX29F010 データシートの表示（PDF） - NexFlash -> Winbond Electronics

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NX29F010

1M-BIT (128K x 8-bit) CMOS, 5.0V Only ULTRA-FAST SECTORED FLASH MEMORY

NexFlash -> Winbond Electronics 

NX29F010

ERASE AND PROGRAMMING PERFORMANCE

Parameter

Chip/Sector Erase Time

Byte Programming Time

Typ.(1) Max.(2) Unit

1.0 15 sec

27 300/1000 µs

Chip Programming Time(3)

3.5 12.5 sec

Comments

Excludes 00H Programming Prior to Erase(4)

Commercial / Industrial Temperature

Excludes System Level Overhead(5)

Notes:

1. Typical program and erase times assume the following conditions: 25°C, 5.0V Vcc, 100,000 cycles. Additionally,

programming typicals assume checkerboard pattern.

2. Under worst case conditions for Commercial and Industrial temperature ranges, Vcc = 4.5V (4.75V for –35),

100,000 cycles.

3. The typical chip programming time is considerably less than the maximum chip programming time listed, since

most bytes program faster than the maximum byte program time listed. If the maximum byte program time given is

exceeded, only then does the device set DQ5 = 1. See the section on DQ5 for further information.

4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.

5. System-level overhead is the time required to execute the four-bus-cycle command sequence for programming.

See Table 2 for further information on command definitions.

6. The device has a typical erase and program cycle endurance of 1,000,000 cycles. 100,000 cycles are guaran-

teed.

LATCHUP CHARACTERISTIC

Parameter

Min.

Input Voltage with Respect to GND on I/O Pins

Vcc Current

–1.0V

–100 mA

Note:

1. Includes all pins except Vcc. Test conditions: Vcc = 5.0V, one pin at a time.

Max.(2)

VCC + 1.0V

+100 mA

DATA RETENTION

Parameter

Minimum Pattern Data Retention Time

Vcc Current

Test Conditions

150°C

125°C

Min.

10

20

Unit

Years

Years

20

NexFlash Technologies, Inc.

NXPF001F-0600

06/22/00 ©

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