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DN3535NW データシートの表示(PDF) - Supertex Inc

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DN3535NW Datasheet PDF : 4 Pages
1 2 3 4
Thermal Characteristics
Package
ID (continuous)*
ID (pulsed)
Power Dissipation
@ TA = 25°C
TO-243AA
230mA
500mA
1.6W
* ID (continuous) is limited by max rated Tj.
Mounted on FR4 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate.
θjc
°C/W
15
DN3535
θja
°C/W
78
IDR*
230mA
IDRM
500mA
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol
BVDSX
VGS(OFF)
VGS(OFF)
IGSS
ID(OFF)
Parameter
Drain-to-Souce Breakdown Voltage
Gate-to-Source OFF Voltage
Change in VGS(OFF) with Temperature
Gate Body Leakage Current
Drain-to-Source Leakage Current
IDSS
RDS(ON)
Saturated Drain-to-Source Current
Static Drain-to-Source
ON-State Resistance
Min Typ Max Unit
Conditions
350
V
VGS = -5.0V, ID = 1.0µA
-1.5
-3.5
V
VDS = 15V, ID = 10µA
4.5 mV/°C VDS = 15V, ID = 10µA
100
nA
VGS = ±20V, VDS = 0V
1.0
µA
VGS = -5.0V, VDS = Max Rating
1.0
mA
VGS = -5.0V, VDS = 0.8 Max Rating
TA = 125°C
200
mA
VGS = 0V, VDS = 15V
10
VGS = 0V, ID = 150mA
RDS(ON)
Change in RDS(ON) with Temperature
1.1
GFS
Forward Transconductance
200
CISS
Input Capacitance
360
COSS
Common Source Output Capacitance
40
CRSS
Reverse Transfer Capacitance
10
td(ON)
Turn-ON Delay Time
15
tr
Rise Time
20
td(OFF)
Turn-OFF Delay Time
20
tf
Fall Time
30
VSD
Diode Forward Voltage Drop
1.8
trr
Reverse Recovery Time
800
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
%/°C
mg
pF
ns
V
ns
VGS = 0V, ID = 150mA
ID = 100mA, VDS=10V
VGS = -5.0V, VDS = 25V, f =1.0Mhz
VDD = 25V,
ID = 150mA,
RGEN = 25,
VGS = 0V to -10V
VGS = -5.0V, ISD = 150mA
VGS = -5.0V, ISD = 150mA
Switching Waveforms and Test Circuit
0V
INPUT
-10V
10%
VDD
OUTPUT
0V
t(ON)
td(ON)
tr
10%
90%
90%
t(OFF)
td(OFF)
tF
10%
90%
PULSE
GENERATOR
Rgen
INPUT
VDD
RL
OUTPUT
D.U.T.
2

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