DG449 データシートの表示（PDF） - Vishay Semiconductors

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DG449

High Voltage Single SPDT Analog Switch in SOT23-8

Vishay Semiconductors 

DG449

Vishay Siliconix

SPECIFICATIONSa

Parameter

Analog Switch

Analog Signal Rangee

On-Resistance

On-Resistance MATCH

On-Resistance Flatness

Symbol

VANALOG

RON

RON

RON

Flatness

Test Conditions

Unless Otherwise Specified

V+ = 12 V, V- = 0 V

VIN = 2.4 V, 0.8 Vf

Ino/nc = 1 mA, VCOM = 3, 8 V

V+ = 10.8 V

Ino/nc = 1 mA, VCOM = 2, 6, 10 V

V+ = 10.8 V

D Suffix

- 40 °C to 85 °C

Temp.b Min.d Typ.c Max.d Unit

Full

0

Room

Full

Room

Full

Room

Full

12

V

67

85

96

4

5



17

25

31

Dynamic Characteristics

Turn-On Time

Turn-Off Time

Charge Injectione

tON

Room

Full

tOFF

VNO, NC = 10 V, RL = 300 , CL = 35 pF

Room

Full

Q

CL = 1 nF, Vgen = 0 V, Rgen = 0 

Room

133

168

192

58

92

nS

96

6

pC

Power Supplies

Positive Supply Current

I+

V+ = 13.2 V, VIN = 0 V, 5 V or V+

Room

Full

3

20

30

µA

Notes:

a. Refer to PROCESS OPTION FLOWCHART .

b. Room = 25 °C, Full = as determined by the operating temperature suffix.

c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.

d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.

e. Guaranteed by design, not subject to production test.

f. VIN = input voltage to perform proper function.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

www.vishay.com

4

Document Number: 73897

S11-0097-Rev. B, 24-Jan-11

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