DIM200PHM33-F000
ELECTRICAL CHARACTERISTICS
Tcase = 25°C unless stated otherwise.
Symbol
Parameter
ICES Collector cut-off current
IGES
VGE(TH)
Gate leakage current
Gate threshold voltage
VCE(sat) †
Collector-emitter
saturation voltage
IF
Diode forward current
IFM
Diode maximum forward
current
VF † Diode forward voltage
Cies Input capacitance
Qg Gate charge
Cres Reverse transfer capacitance
LM Module inductance
RINT Internal transistor resistance
SCData Short circuit current, ISC
Note:
† Measured at the auxiliary terminals
* L is the circuit inductance + LM
Test Conditions
Min
VGE = 0V, VCE = VCES
VGE = 0V, VCE = VCES, Tcase = 125°C
VGE = ± 20V, VCE = 0V
IC = 20mA, VGE = VCE
5.5
VGE = 15V, IC = 200A
VGE = 15V, IC = 200A, Tj = 125°C
DC
tp = 1ms
IF = 200A
IF = 200A, Tj = 125°C
VCE = 25V, VGE = 0V, f = 1MHz
±15V
VCE = 25V, VGE = 0V, f = 1MHz
Tj = 125°C, VCC = 2500V
tp ≤ 10μs, VGE ≤ 15V
VCE (max) = VCES – L* x dI/dt
IEC 60747-9
Typ
400
6.5
2.8
3.6
200
400
2.9
3.0
36
5
0.55
40
500
930
Max Units
1
mA
15 mA
nA
7.0
V
V
V
A
A
V
V
nF
μC
nF
nH
μ
A
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
3/8
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