DS1312E データシートの表示（PDF） - Dallas Semiconductor -> Maxim Integrated
部品番号
コンポーネント説明
メーカー
DS1312E Datasheet PDF : 11 Pages
| |||
ABSOLUTE MAXIMUM RATINGS*
Voltage on Any Pin Relative to Ground
Operating Temperature
Storage Temperature
Soldering Temperature
-0.5V to +7.0V
-40°C to +85°C
-55°C to +125°C
260°C for 10 seconds
DS1312
* This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operation sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods of time may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
PARAMETER
SYMBOL MIN TYP
Supply Voltage TOL=GND
Supply Voltage TOL=VCCO
Battery Supply Voltage
Logic 1 Input
Logic 0 Input
VCCI
VCCI
VBAT
VIH
VIL
4.75 5.0
4.5
5.0
2.0
2.0
-0.3
MAX
5.5
5.5
6.0
VCCI+0.3
+0.8
(-40°C to +85°C)
UNITS NOTES
V
1
V
1
V
1
V
1, 12
V
1, 12
DC ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
Operating Current (TTL inputs)
Operating Current (CMOS inputs)
RAM Supply Current
(VCCO ³ VCCI -0.2V)
RAM Supply Current
(VCCO ³ VCCI -0.3V)
VCC Trip Point (TOL=GND)
VCC Trip Point (TOL=VCCO)
VBAT Trip Point
VCC/VBAT Switch Point
Output Current @ 2.4V
Output Current @ 0.4V
Input Leakage
Output Leakage
Battery Monitoring Test Load
ICC1
ICC2
ICCO1
ICCO1
VCCTP
VCCTP
VBTP
VSW
IOH
IOL
IIL
ILO
RINT
MIN
4.50
4.25
2.5
2.6
-1
-1.0
-1.0
0.8
(-40°C to +85°C; VCCI >VCCTP)
TYP MAX UNITS NOTES
200
400
µA
2
50
100
µA
2, 5
140
mA
3
200
mA
4
4.62
4.75
4.37
4.50
2.6
2.7
2.7
2.8
4
+1.0
+1.0
1.2
1.5
V
1
V
1
V
1
V
1
mA
7, 10
mA
7, 10
µA
µA
MΩ
DC ELECTRICAL CHARACTERISTICS (-40°C to +85°C; VCCI < VBAT; VCCI < VSW)
PARAMETER
SYMBOL MIN TYP MAX UNITS NOTES
Battery Current
IBAT
100
nA
2
Battery Backup Current
ICCO2
500
µA
6
Supply Voltage
VCCO
VBAT-0.2
V
1
CEO Output
VOHL
VBAT-0.2
V
1, 8
5 of 11
Share Link: 