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RMPA39100 データシートの表示(PDF) - Raytheon Company

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RMPA39100
Raytheon
Raytheon Company Raytheon
RMPA39100 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
RMPA39100
37-40 GHz 1 Watt Power Amplifier MMIC
PRODUCT INFORMATION
Recommended
Procedure
for biasing and
operation)
CAUTION: LOSS OF GATE VOLTAGE (VG) WHILE DRAIN VOLTAGE (VD) IS PRESENT CAN DAMAGE THE
AMPLIFIER.
The following sequence must be followed to properly test the amplifier:
Step 1: Turn off RF input power.
Step 2: Connect the DC supply grounds to the ground
of the chip carrier.
Slowly apply negative gate bias supply voltage
of -1.5 V to Vg.
Step 3: Slowly apply positive drain bias supply voltage
of +5 V to Vd.
Step 4: Adjust gate bias voltage to set the quiescent
current of Idq=1000 mA.
Step 5: After the bias condition is established, the RF
input signal may now be applied at the
appropriate frequency band.
Step 6: Follow turn-off sequence of:
(i) Turn off RF input power,
(ii) Turn down and off drain voltage (Vd),
(iii) Turn down and off gate bias voltage (Vg).
Note:
An example auto bias sequencing circuit to apply negative gate voltage and positive drain voltage for the above procedure is
shown below.
www.raytheonrf.com
Characteristic performance data and specifications are subject to change without notice.
Revised December 17, 2001
Page 4
Raytheon RF Components
362 Lowell Street
Andover, MA 01810

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