DS28E05P-T データシートの表示（PDF） - Maxim Integrated

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DS28E05P-T

1-Wire EEPROM

Maxim Integrated 

DS28E05

1-Wire EEPROM

Absolute Maximum Ratings

IO Voltage Range to GND.......................................-0.5V to 4.0V

IO Sink Current.................................................................±20mA

Operating Temperature Range ........................... -40°C to +85°C

Junction Temperature.......................................................+150°C

Storage Temperature Range............................. -55°C to +125°C

Lead Temperature (soldering, 10s).................................. +300°C

Soldering Temperature (reflow) .......................................+260°C

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these

or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect

device reliability.

Electrical Characteristics

(TA = -40°C to +85°C, unless otherwise noted.) (Note 1)

PARAMETER

SYMBOL

CONDITIONS

IO PIN: GENERAL DATA

1-Wire Pullup Voltage

1-Wire Pullup Resistance

Input Capacitance

Input Load Current

VPUP

RPUP

CIO

IL

(Note 2)

VPUP = 3.3V ±10% (Note 3)

(Notes 4, 5)

IO pin at VPUP

High-to-Low Switching Threshold

VTL

(Notes 6, 7)

Input Low Voltage

VIL

(Notes 2, 8)

Low-to-High Switching Threshold

VTH

(Notes 6, 9)

Switching Hysteresis

VHY

(Notes 6, 10)

Output Low Voltage

VOL

IOL = 4mA (Note 11)

Recovery Time

tREC RPUP = 1500Ω (Notes 2, 12)

Time Slot Duration

tSLOT (Notes 2, 13)

IO PIN: 1-Wire RESET, PRESENCE DETECT CYCLE

Reset Low Time

Reset High Time

Presence Detect Sample Time

IO PIN: 1-Wire WRITE

tRSTL

tRSTH

tMSP

(Note 2)

(Note 14)

(Notes 2, 15)

Write-Zero Low Time

Write-One Low Time

IO PIN: 1-Wire READ

tW0L

tW1L

(Notes 2, 16)

(Notes 2, 16)

Read Low Time

Read Sample Time

EEPROM

tRL

tMSR

(Notes 2, 17)

(Notes 2, 17)

Programming Current

Programming Time for a 16-Bit

Segment

IPROG

tPROG

VPUP = 3.63V (Notes 5, 18)

(Note 19)

Write/Erase Cycling Endurance

Data Retention

NCY

tDR

TA = +85°C (Notes 20, 21)

TA = +85°C (Notes 22, 23, 24)

MIN TYP MAX UNITS

2.97

3.63

V

300

1500

Ω

1500

pF

5

20

µA

0.65 x

VPUP

V

0.3

V

0.75 x

VPUP

V

0.3

V

0.4

V

5

µs

13

µs

48

80

µs

48

µs

8

10

µs

8

16

µs

1

2

µs

1

tRL + δ

1000

10

2-δ

µs

2

µs

400

µA

16

ms

—

Years

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