DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

DS_S1A0291X01 データシートの表示(PDF) - Samsung

部品番号
コンポーネント説明
メーカー
DS_S1A0291X01
Samsung
Samsung Samsung
DS_S1A0291X01 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
PB/REC PRE AMP FOR 2 DECK
S1A0291X01
ELECTRICAL CHARACTERISTICS
(Ta = 25°C, VCC = 9V, f = 1kHz, unless otherwise specified)
Characteristic
Symbol
Test Conditions
Circuit Current
ICCQ VI = 0, REC MODE
Open Loop Voltage Gain
GVO VI = 80dBm
Output Voltage
Total Harmonic Distortion
VO1
THD1
THD = 1%, NAB
VO = 0.2V, NAB
Cross Talk
CH to CH
Ain to Bin
CT1 VO = 0.5V, NAB
CT2 VO = 0.5V, NAB
Equivalent Input Noise Voltage
Fiter: 20Hz 20kHz
VNI
RG = 2.2k, VI = 0
Close Loop Voltage Gain
GVC VI = 68dBm, ALC off
Output Voltage
Total Harmonic Distortion
VO2
THD2
THD = 1%, ALC off
VI = 0dBm, ALC off
ALC Output Voltage
ALC THD
VO(ALC)
THDALC
VI = 20dBm
VI = 20dBm
ALC Range
Cross Talk (ALC)
RALC
(ALCR)
CT3
VI = 60dBm, +3dB UP
VI = 50dBm
Record TO Playback Cross Talk
REC input = GND
CT4
PLAY output = 0.5V
Muting Range
MR
VI = 20dBm
Min. Typ. Max. Unit
10
18
26
mA
60
90
dB
0.75 1.2
V
0.05 0.3
%
55 45 dB
55 45 dB
1.2
2.2
µV
58
60
62
dB
1.2 1.6
V
0.2
1
%
0.75 0.95 1.35
V
0.2 1.0
%
40
50
dB
55 40 dB
60 40 dB
55 40 dB
3

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]