S1T8528 データシートの表示（PDF） - Samsung

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S1T8528

ENHANCED-1 CHIP CT0 RF IC

Samsung 

S1T8528

ENHANCED-1 CHIP CT0 RF IC

ELECTRICAL CHARACTERISTICS (Continued)

Characteristic

Expander Gain Difference

Expander Output Distortion

Mute Attenuation Ratio

Expander Maximum Output

Voltage

Maximum Output Voltage

Input Current

Input Voltage

Output Current

Output Voltage

PLL regulator voltage

Regulator Load Current

Symbol

∆GV1(EXP)

∆GV2(EXP)

∆GV3(EXP)

THDEXP

ATTMUTE

VOEXP(MAX)

VOSPK(MAX)

IIH

IIL

VIH

VIL

IOH

IOL

VOH1

VOL1

VOH2

VOL2

VPLLREG

IREG

Test Conditions

VinE = −10dB

VinE = − 20dB

VinE =− 30dB

VinE = 63.2mVrms → 0dB

VinE = 63.2mVrms → 0dB

VinE = Variable

THD = 10%

RL = 150Ω

RL = 600Ω

Vin = Vcc

Vin = 0V

−

−

Vout = Vcc

Vout = 0V

PDT,PDR: Io = -0.3mA

( Sourcing )

PDT,PDR: Io = 0.3mA

( Sinking )

LD,fMCU: Io = − 0.1mA

( Sourcing )

LD,fMCU: Io = 0.1mA

( Sinking )

−

Vout = VREG(OPEN)-0.05V

Min.

−1.0

−1.5

−2.0

−

60

Typ.

0

0

0

0.5

80

Max.

1.0

1.5

2.0

1.0

−

Unit

dB

dB

dB

%

dB

800

−

− mVrms

−

2.2

−

Vp-p

−

3.0

-

Vp-p

−

−

5

µA

−5

−

−

µA

Vcc-0.3 −

−

V

−

−

0.3

V

0.3

−

−

mA

0.3

−

−

mA

Vcc-0.4 −

−

V

−

−

0.4

V

Vcc-0.5 −

−

V

−

−

0.5

V

1.90 2.05 2.20

V

−

3.0

−

mA

10

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