S1T8528X01-Q0R0 データシートの表示（PDF） - Samsung

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S1T8528X01-Q0R0

ENHANCED-1 CHIP CT0 RF IC

Samsung 

S1T8528

ENHANCED-1 CHIP CT0 RF IC

ELECTRICAL CHARACTERISTICS

Characteristic

Symbol

Test Conditions

Min. Typ. Max.

Operating Voltage

Vcc

−

2.0

−

5.5

RECEIVER

( VCC = 3.6V, fC = 49.7MHz, fDEV = ± 3kHz, fMOD = 1kHz,Ta = 25°C, unless otherwise specified )

Sensitivity

(input for 12dB SINAD)

VSEN

MIX1 Matched Impedance

Input

−

0.7 2.0

Input for -3dB Limiting

VLIM

MIX1 Matched Impedance

Input

−

0.7 2.0

S/N Ratio

S/N

RFin = 1mVrms

48

55

−

Recovered Audio Output

VO(RA)

RFin = 1mVrms,

After 2nd stage LPF

147

177 207

Recovered Audio Output

Voltage Drop

VO(RAD)

Vcc = 5.5V → 2.0V

RFin = 1mVrms

−3.0 −1.5

−

Detector Output Resistance RO(DET)

RFin = 1mVrms

−

1.2

−

Detect Output Voltage

VO(DET)

RFin = 1mVrms

1.0

1.5 2.0

Detector Output Distortion

THDDET

RFin = 1mVrms

(with CCITT Filter)

−

1.0 2.5

Comparator Threshold

Voltage Difference

∆VTH

VCOMP = 360mVp-p

RHYS = 180KΩ

70

110 150

Comparator Output Voltage 1 VOH

VCOMP =360mVp-p

RHYS = 180kΩ

Vcc-0.4 −

−

Comparator Output Voltage 2 VOL

VCOMP = 360mVp-p

RHYS = 180kΩ

−

0.1 0.4

First Mixer Conversion

Voltage Gain

∆GV(1M)

VMIX1 1/2 = 1mVrms

RL = 330kΩ

12

15

18

Second Mixer Conversion

Voltage Gain

∆GV(2M)

VMIX2 = 1mVrms

RL = 1.5kΩ

18

22

26

Demodulator Bandwidth

DBW

RFin = 1mVrms

−

10

−

Limiter Input Sensitivity

VI(LIM)

Fc = 455kHz , −3dB Limiting

−

20

40

AM Rejection Ratio

AMRR

RFin = 1mVrms

AM MOD = 30% @1kHz

−

40

−

First Mixer 3rd Order

Intercept Point

IMD3

MIX1 Input 50Ω

Termination

−

− 15

−

First Mixer Input Impedance RI(1M) /

CI(1M)

Fc = 50MHz

−

690

−

7.2

First Mixer output Impedance Ro(1M)

Fc = 10.7MHz

−

330

−

Unit

V

µVrms

µVrms

dB

mVrms

dB

KΩ

V

%

mV

V

V

dB

dB

kHz

uVrms

dB

dBm

Ω

pF

Ω

8

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