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DTA144T(2011) データシートの表示(PDF) - Unisonic Technologies

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DTA144T
(Rev.:2011)
UTC
Unisonic Technologies UTC
DTA144T Datasheet PDF : 3 Pages
1 2 3
DTA144T
PNP SILICON TRANSISITOR
„ ABSOLUTE MAXIMUM RATINGS (TA=25)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-50
V
Collector-Emitter Voltage
VCEO
-50
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-100
mA
Collector Power Dissipation
Pc
200
mW
Junction Temperature
TJ
150
°С
Storage Temperature
TSTG
-55~+150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)
PARAMETER
SYMBOL
Collector-Base Breakdown Voltage
BVCBO
Collector-Emitter Breakdown Voltage
BVCEO
Emitter-Base Breakdown Voltage
BVEBO
Collector Cutoff Current
ICBO
Emitter Cutoff Current
IEBO
Collector-Emitter Saturation Voltage
VCE(SAT)
DC Current Transfer Ratio
hFE
Transition Frequency (Note)
fT
Input Resistance
R1
Note: Transition frequency of the device
TEST CONDITIONS
IC=-50μA
IC=-1mA
IE=-50μA
VCB=-50V
VEB=-4V
IC =-5mA, IB= -0.5mA
VCE =-5V, IC= -1mA
VCE=-10V, IE=5mA, f=100MHz
MIN TYP MAX UNIT
-50
V
-50
V
-5
V
-0.5 μA
-0.5 μA
-0.3 V
100 250 600
250
MHz
32.9 47 61.1 k
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R206-065.C

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