DTC115THT2L データシートの表示（PDF） - ROHM Semiconductor

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DTC115THT2L

Digital transistors (built in resistor)

ROHM Semiconductor 

Transistors

DTC115TH / DTC115TUA / DTC115TKA / DTC115TSA

!Absolute maximum ratings (Ta=25°C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power DTC115TH

dissipation

DTC115TUA / DTC115TKA

DTC115TSA

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

Pc

Tj

Tstg

Limits

50

50

5

100

150

200

300

150

−55~+150

Unit

V

V

V

mA

mW

˚C

˚C

!Packaging, marking, and packaging specifications

Part No.

Package

Marking

Packaging code

Basic ordering unit (pieces)

DTC115TH

EMT3H

09

T2L

8000

DTC115TUA

UMT3

09

T106

3000

DTC115TKA

SMT3

09

T146

3000

DTC115TSA

SPT

-

TP

5000

!Electrical characteristics (Ta=25°C)

Parameter

Symbol

Min. Typ. Max. Unit

Conditions

Collector-base breakdown voltage

BVCBO

50

-

-

V IC=50µA

Collector-emitter breakdown voltage BVCEO

50

-

-

V IC=1mA

Emitter-base breakdown voltage

BVEBO

5

-

-

V IE=50µA

Collector cutoff current

ICBO

-

-

0.5

µA VCB=50V

Emitter cutoff current

IEBO

-

-

0.5

µA VEB=4V

Collector-emitter saturation voltage

VCE(sat)

-

-

0.3

V IC/IB=1mA/0.1mA

DC current transfer ratio

hFE

100

250

600

-

IC=1mA, VCE=5V

Input resistance

R1

70

100

130

kΩ

-

Transition frequency

fT

-

250

-

MHz VCE=10V, IE=−5mA, f=100MHz

∗

∗ Transition frequency of the device.

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