DTC115GKA データシートの表示（PDF） - ROHM Semiconductor
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DTC115GKA Datasheet PDF : 3 Pages
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Transistors
DTC115GUA / DTC115GKA / DTC115GSA
Digital transistors (built-in resistor)
DTC115GUA / DTC115GKA / DTC115GSA
zFeatures
1) The built-in bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input, and
parasitic effects are almost completely eliminated.
2) Only the on / off conditions need to be set for operation,
making device design easy.
3) Higher mounting densities can be achieved.
zEquivalent circuit
C
B
R
E
E : Emitter
C : Collector
B : Base
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltag
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
100
mA
Collector power DTA115GUA / DTA115GKA
dissipation
DTA115GSA
Pc
200
300
mW
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
zPackage, marking, and packaging specifications
Type
Package
Marking
Packaging code
Basic ordering unit (pieces)
DTC115GUA
UMT3
K29
T106
3000
DTC115GKA
SMT3
K29
T146
3000
DTC115GSA
SPT
−
TP
5000
zExternal dimensions (Unit : mm)
DTC115GUA
1.25
2.1
0.1Min.
ROHM : UMT3
EIAJ : SC-70
DTC115GKA
Each lead has same dimensions
(1) Emitter
(2) Base
(3) Collector
1.6
2.8
0.3Min.
ROHM : SMT3
EIAJ : SC-59
DTC115GSA
4
Each lead has same dimensions
(1) Emitter
(2) Base
(3) Collector
2
0.45
2.5 0.5 0.45
5
(1) (2) (3)
Taping specifications
ROHM : SPT
EIAJ : SC-72
(1) Emitter
(2) Collector
(3) Base
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltag
BVCBO
50
−
−
V IC=50µA
BVCEO
50
−
−
V IC=1mA
Emitter-base breakdown voltage
BVEBO
5
−
−
V IE=72µA
Collector cutoff current
ICBO
−
−
0.5
µA VCB=50V
Emitter cutoff current
IEBO
30
−
58
µA VEB=4V
Collector-emitter saturation voltage
VCE(sat)
−
−
0.3
V IC=5mA, IB=0.25mA
DC current transfer ratio
hFE
82
−
−
−
IC=5mA, VCE=5V
Emitter-base resistance
R
70
100
130
kΩ
−
Transition frequency
fT
−
250
−
MHz VCE=10V, IE=−5mA, f=100MHz
∗
∗ Transition frequency of the device.
Rev.A
1/2
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