DTC115E-AE3-6-R データシートの表示（PDF） - Unisonic Technologies
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DTC115E-AE3-6-R Datasheet PDF : 2 Pages
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DTC115E
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING ( Ta=25℃ )
PARAMETER
SYMBOL
RATINGS
UNIT
Supply Voltage
VCC
50
V
Input Voltage
VIN
-10 ~ +40
V
Output Current
IOUT
20
mA
IC(MAX)
100
Power Dissipation
SOT-23
SOT-523
PD
200
mW
150
mW
Junction Temperature
Storage Temperature
TJ
+150
℃
TSTG
-40 ~ +150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
Input Voltage
VI(OFF)
VI(ON)
Output Voltage
VOUT(ON)
Input Current
IIN
Output Current
IO(OFF)
DC Current Gain
GI
Input Resistance
R1
Resistance Ratio
R2/R1
Transition Frequency
fT
*Transition frequency of the device
TEST CONDITIONS
VCC=5V, IOUT=100µA
VOUT=0.3V, IOUT=1mA
IOUT=5 mA, IIN=0.25mA
VIN= 5V
VCC=50V, VIN=0V
VOUT= 5V, IOUT= 5mA
VCE=10V, IE=-5mA, f=100MHz *
MIN TYP MAX UNIT
0.5 V
3
0.1 0.3 V
0.15 mA
0.5 µA
82
70 100 130 kΩ
0.8 1 1.2
250
MHz
EQUIVALENT CIRCUIT
IN R1
OUT
R2
GND
IN
OUT
GND
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-055,B
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