AS4LC1M16E5 データシートの表示（PDF） - Alliance Semiconductor

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AS4LC1M16E5

3V 1M×16 CMOS DRAM (EDO)

Alliance Semiconductor 

AC parameters common to all waveforms

Symbol

Parameter

tRC

Random read or write cycle time

tRP

RAS precharge time

tRAS

RAS pulse width

tCAS

CAS pulse width

tRCD

RAS to CAS delay time

tRAD

RAS to column address delay time

tRSH

CAS to RAS hold time

tCSH

RAS to CAS hold time

tCRP

CAS to RAS precharge time

tASR

Row address setup time

tRAH

Row address hold time

tT

Transition time (rise and fall)

tREF

Refresh period

tCP

CAS precharge time

tRAL

Column address to RAS lead time

tASC

Column address setup time

tCAH

Column address hold time

Shaded areas indicate advance information.

Read cycle

Symbol

Parameter

tRAC

Access time from RAS

tCAC

Access time from CAS

tAA

Access time from address

tRCS

Read command setup time

tRCH

Read command hold time to CAS

tRRH

Read command hold time to RAS

Shaded areas indicate advance information.

AS4LC1M16E5

®

-50

Min

Max

80

–

30

–

50

10K

8

10K

15

35

9

25

10

–

40

–

5

–

0

–

8

–

1

50

–

16

8

–

25

–

0

–

8

–

-60

Min

Max

100

–

40

–

60

10K

10

10K

15

43

10

30

10

–

50

–

5

–

0

–

10

–

1

50

–

16

10

–

30

–

0

–

10

–

Unit Notes

ns

ns

ns

ns

ns 9

ns 10

ns

ns

ns

ns

ns

ns 7,8

ms 6

ns

ns

ns

ns

-50

Min

Max

–

50

–

12

–

25

0

–

0

–

0

–

-60

Min

Max

–

60

–

15

–

30

0

–

0

–

0

–

Unit Notes

ns 9

ns 9,16

ns 10,16

ns

ns 12

ns 12

4/11/01

Alliance Semiconductor

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