AS29LV800 データシートの表示（PDF） - Alliance Semiconductor

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AS29LV800

3V 1M × 8/512K × 16 CMOS Flash EEPROM

Alliance Semiconductor 

March 2001

Item

Erase Suspend

Sector Protect

Ready/Busy

AS29LV800

®

Description

Erase Suspend allows interruption of sector erase operations to read data from or program data to a

sector not being erased. Erase suspend applies only during sector erase operations, including the

time-out period. Writing an Erase Suspend command during sector erase time-out results in

immediate termination of the time-out period and suspension of erase operation.

AS29LV800 ignores any commands during erase suspend other than Read/Reset, Program or Erase

Resume commands. Writing the Erase Resume Command continues erase operations. Addresses are

Don’t Care when writing Erase Suspend or Erase Resume commands.

AS29LV800 takes 0.2–15 µs to suspend erase operations after receiving Erase Suspend command.

To determine completion of erase suspend, either check DQ6 after selecting an address of a sector

not being erased, or poll RY/BY. Check DQ2 in conjunction with DQ6 to determine if a sector is

being erased. AS29LV800 ignores redundant writes of Erase Suspend.

While in erase-suspend mode, AS29LV800 allows reading data (erase-suspend-read mode) from or

programming data (erase-suspend-program mode) to any sector not undergoing sector erase;

these operations are treated as standard read or standard programming mode. AS29LV800 defaults

to erase-suspend-read mode while an erase operation has been suspended.

Write the Resume command 30h to continue operation of sector erase. AS29LV800 ignores

redundant writes of the Resume command. AS29LV800 permits multiple suspend/resume

operations during sector erase.

When attempting to write to a protected sector, DATA polling and Toggle Bit 1 (DQ6) are activated

for about <1 µs. When attempting to erase a protected sector, DATA polling and

Toggle Bit 1 (DQ6) are activated for about <5 µs. In both cases, the device returns to read mode

without altering the specified sectors.

RY/BY indicates whether an automated on-chip algorithm is in progress (RY/BY = low) or

completed (RY/BY = high). The device does not accept Program/Erase commands when

RY/BY = low. RY/BY= high when device is in erase suspend mode. RY/BY = high when device

exceeds time limit, indicating that a program or erase operation has failed. RY/BY is an open drain

output, enabling multiple RY/BY pins to be tied in parallel with a pull up resistor to VCC.

3/22/01; V.1.0

Alliance Semiconductor

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