ECG015B データシートの表示（PDF） - Unspecified
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ECG015B Datasheet PDF : 5 Pages
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ECG015
¼ Watt, High Linearity InGaP HBT Amplifier
The Communications Edge TM
Product Information
Typical Device RF Performance
Supply Bias = +8 V, Rbias = 30 Ω, Icc = 100 mA
1. Test conditions: T = 25º C, Supply Voltage = +8 V, Device Voltage = 5.0 V, Rbias = 30 Ω, Icc = 100 mA typical, 50 Ω System.
2. 3OIP measured with two tones at an output power of +11 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by external components shown in the application circuit.
Ssg & P1dB vs.
Temperature @1.96GHz
24
22
20
18
16
14
Ssg OIP3 P1dB
12
-40°C
25°C
85°C
0
10
20
30
40
50
60
70
11
0
10
20
30
40
50
60
70
11
ACPR1vs. Pout at 2.14GHz
(IS95 9 Ch Fwd)
25°C -40°C 85°C
13
15
Average power out(dBm)
140
120
100
80
60
40
20
0
17
4.5
ACPR1 vs. Pout
at 1.9GHz (IS95 9 Ch. Fwd)
85°C -40°C 25°C
13
15
Average power out(dBm)
Icc vs. Vde
25°C
4.7
4.9
5.1
Vde
P1dB vs. Frequency
24.5
24
23.5
23
22.5
17
22
1.96GHz
2.14GHz
Ssg, OIP3 and P1dB vs.
Temperature at 2.45GHz
44
42
40
5.3 38
-40°C
OIP3 Ssg P1dB
25°C
2.45GHz
24
20
16
12
85°C
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com
September 2004
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