EDS1232AASE データシートの表示（PDF） - Elpida Memory, Inc
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EDS1232AASE Datasheet PDF : 53 Pages
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EDS1232AASE
Pin Capacitance (TA = 25°C, f = 1MHz)
Parameter
Symbol Pins
min.
Typ
Input capacitance
CI1
Address
1.5
—
CI2
CLK, CKE, /CS, /RAS,
/CAS, /WE, DQM
1.5
—
Data input/output capacitance CI/O
DQ
3.0
—
max.
3.0
3.0
5.5
Unit
Notes
pF
pF
pF
AC Characteristics (TA = 0 to +70°C, VDD, VDDQ = 3.3V±0.3V, VSS, VSSQ = 0V)
-60
-75
Parameter
Symbol
min.
max.
min.
max.
Unit
Notes
System clock cycle time
(CL = 2)
(CL = 3)
tCK
7.5
—
10
—
ns
tCK
6
—
7.5
—
ns
CLK high pulse width
tCH
2.5
—
2.5
—
ns
CLK low pulse width
tCL
2.5
—
2.5
—
ns
Access time from CLK
tAC
—
5.4
—
5.4
ns
Data-out hold time
tOH
2
—
2
—
ns
CLK to Data-out low impedance
tLZ
0
—
0
—
ns
CLK to Data-out high impedance
tHZ
2
5.4
2
5.4
ns
Input setup time
tSI
1.5
—
1.5
—
ns
Input hold time
tHI
0.8
—
0.8
—
ns
CKE setup time (Power down exit)
tCKSP
1.5
—
1.5
—
ns
ACT to REF/ACT command period
(operation)
tRC
60
67.5
ns
(refresh)
tRC
60
67.5
ns
Active to Precharge command period
Active command to column command
(same bank)
Precharge to active command period
Write recovery or data-in to precharge
lead time
Last data into active latency
tRAS
tRCD
tRP
tDPL
tDAL
Active (a) to Active (b) command period tRRD
42
120000
45
120000
ns
15
20
ns
15
20
ns
12
15
ns
2CLK +
15ns
2CLK +
20ns
12
15
ns
Mode register set cycle time
tRSC
2
2
CLK
Transition time (rise and fall)
Refresh period
(4096 refresh cycles)
tT
0.5
30
0.5
30
ns
tREF
—
64
—
64
ms
Data Sheet E0350E20 (Ver. 2.0)
6
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