EDS2516APTA データシートの表示（PDF） - Elpida Memory, Inc

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EDS2516APTA

256M bits SDRAM

Elpida Memory, Inc 

EDS2516APTA

Electrical Specifications

• All voltages are referenced to VSS (GND).

• After power up, execute power up sequence and initialization sequence before proper device operation is achieved

(refer to the Power up sequence).

Absolute Maximum Ratings

Parameter

Symbol

Rating

Unit

Note

Voltage on any pin relative to VSS

Supply voltage relative to VSS

Short circuit output current

Power dissipation

EOperating temperature

Storage temperature

VT

VDD

IOS

PD

TA

Tstg

–0.5 to VDD + 0.5 (≤ 4.6 (max.))

V

–0.5 to +4.6

V

50

mA

1.0

W

0 to +70

°C

–55 to +125

°C

Caution

Exposing the device to stress above those listed in Absolute Maximum Ratings could cause

Opermanent damage. The device is not meant to be operated under conditions outside the limits

described in the operational section of this specification. Exposure to Absolute Maximum Rating

conditions for extended periods may affect device reliability.

L Recommended Operating Conditions (TA = 0 to +70°C)

Parameter

Symbol

min.

max.

Unit

Supply voltage

VDD, VDDQ

3.0

3.6

V

VSS, VSSQ

0

0

V

Input high voltage

VIH

2.0

VDD + 0.3

V

Input low voltage

VIL

–0.3

0.8

V

P Notes: 1. The supply voltage with all VDD and VDDQ pins must be on the same level.

2. The supply voltage with all VSS and VSSQ pins must be on the same level.

3. VIH (max.) = VDD + 2.0 V for pulse width ≤ 3ns at VDD.

roduct 4. VIL (min.) = VSS – 2.0 V for pulse width ≤ 3ns at VSS.

Notes

1

2

3

4

Data Sheet E0359E20 (Ver. 2.0)

4

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