EL5411IR データシートの表示（PDF） - Intersil
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EL5411IR Datasheet PDF : 18 Pages
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EL5111, EL5211, EL5411
Absolute Maximum Ratings (TA = +25°C)
Supply Voltage between VS+ and VS- . . . . . . . . . . . . . . . . . . . .+18V
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . VS- - 0.5V, VS +0.5V
Maximum Continuous Output Current . . . . . . . . . . . . . . . . . . . 65mA
Maximum Die Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
Ambient Operating Temperature . . . . . . . . . . . . . . . .-40°C to +85°C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Curves
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are
at the specified temperature and are pulsed tests, therefore: TJ = TC = TA
Electrical Specifications VS+ = +5V, VS- = -5V, RL = 1kΩ to 0V, TA = +25°C, Unless Otherwise Specified
PARAMETER
DESCRIPTION
CONDITIONS
MIN TYP MAX UNIT
INPUT CHARACTERISTICS
VOS
TCVOS
IB
RIN
CIN
CMIR
Input Offset Voltage
Average Offset Voltage Drift (Note 1)
Input Bias Current
Input Impedance
Input Capacitance
Common-Mode Input Range
VCM = 0V
VCM = 0V
3
15
mV
7
µV/°C
2
60
nA
1
GΩ
2
pF
-5.5
+5.5
V
CMRR
Common-Mode Rejection Ratio
AVOL
Open-Loop Gain
OUTPUT CHARACTERISTICS
for VIN from -5.5V to 5.5V
-4.5V ≤ VOUT ≤ 4.5V
50
70
dB
62
70
dB
VOL
Output Swing Low
VOH
Output Swing High
ISC
Short-Circuit Current
IOUT
Output Current
POWER SUPPLY PERFORMANCE
IL = -5mA
IL = 5mA
-4.92 -4.85
V
4.85 4.92
V
±180
mA
±65
mA
PSRR
IS
Power Supply Rejection Ratio
Supply Current
VS is moved from ±2.25V to ±7.75V
No load (EL5111)
No load (EL5211)
60
80
dB
2.5
4.5
mA
5
7.5
mA
No load (EL5411)
10
15
mA
DYNAMIC PERFORMANCE
SR
Slew Rate (Note 2)
tS
Settling to +0.1% (AV = +1)
BW
-3dB Bandwidth
-4.0V ≤ VOUT ≤ 4.0V, 20% to 80%
(AV = +1), VO = 2V step
75
V/µs
80
ns
60
MHz
GBWP
Gain-Bandwidth Product
32
MHz
PM
Phase Margin
50
°
CS
Channel Separation
f = 5MHz (EL5211 and EL5411 only)
110
dB
dG
Differential Gain (Note 3)
dP
Differential Phase (Note 3)
NOTES:
1. Measured over operating temperature range.
2. Slew rate is measured on rising and falling edges.
3. NTSC signal generator used.
RF = RG = 1kΩ and VOUT = 1.4V
RF = RG = 1kΩ and VOUT = 1.4V
0.17
%
0.24
°
3
FN7119.5
January 10, 2007
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