DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

ELJ-830-649-1 データシートの表示(PDF) - EPIGAP optoelectronic GmbH

部品番号
コンポーネント説明
メーカー
ELJ-830-649-1
EPIGAP
EPIGAP optoelectronic GmbH EPIGAP
ELJ-830-649-1 Datasheet PDF : 5 Pages
1 2 3 4 5
Jumbo-LED
Radiant Power vs. Forward Current (typical)
3,5
Normalized to ΦE
@I =350mA
F
3,0
2,5
2,0
1,5
1,0
0,5
0,0
0
200 400 600 800 1000 1200
I (mA)
F
Spectral Power Distribution (typical)
at I =350mA
F
1,0
0,8
0,6
0,4
0,2
0,0
700
750
800
850
900
950
1000
Wavelength (nm)
Ambient Temperature vs. Maximal Forward Current
1,2
1,0
0,8
0,6
0,4
0,2
0,0
0
20
40
60
80
100
120
Ambient Temperature (°C)
ELJ-830-649-1
07.05.2008
rev. 02
Forward Current vs. Forward Voltage (typical)
1200
1000
800
600
400
200
0
1,0
1,2
1,4
1,6
1,8
2,0
2,2
U (V)
F
Typical Wavelength Shift vs. Forward Current
9
(rel.
to λP
@I
F
=
350 mA)
8
7
6
5
4
3
2
1
0
-1
-2
0
200 400 600 800 1000 1200
I (mA)
F
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each application by the customers themselves.
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
3 of 5

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]