EMIF02-MIC03F3 データシートの表示（PDF） - STMicroelectronics
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EMIF02-MIC03F3 Datasheet PDF : 7 Pages
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EMIF02-MIC02F2
Table 2: Absolute Ratings (limiting values)
Symbol
Parameter and test conditions
Tj
Maximum junction temperature
Top Operating temperature range
Tstg Storage temperature range
Table 3: Electrical Characteristics (Tamb = 25°C)
Symbol
Parameter
VBR Breakdown voltage
IRM Leakage current @ VRM
VRM Stand-off voltage
VCL Clamping voltage
Rd Dynamic impedance
IPP Peak pulse current
RI/O Series resistance between Input &
Output
Cline Input capacitance per line
Symbol
VBR
IRM
RI/O
Cline
Test conditions
IR = 1 mA
VRM = 12V per line
@ 0V
Value
Unit
125
°C
- 40 to + 85
°C
- 55 to + 150
°C
I
IPP
VCL VBR VRM
IR
IRM
IRM
VRM VBR VCL
V
IR
IPP
Min. Typ. Max. Unit
14
16
V
500
nA
423
470
517
Ω
16
pF
Figure 3: S21 (dB) attenuation measurement
and Aplac simulation
- 10.00
dB
- 15.00
- 20.00
- 25.00
- 30.00
- 35.00
- 40.00
- 45.00
- 50.00
1.0M
3.0M
Measurement
Simulation
10.0M 30.0M 100.0M 300.0M
f/Hz
1.0G
3.0G
Figure 4: Analog crosstalk measurements
-20.00
dB
-30.00
-40.00
I2/O1
-50.00
-60.00
-70.00
-80.00
1.0M
3.0M
10.0M 30.0M 100.0M 300.0M
f/Hz
1.0G
3.0G
2/7
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