ESDALC6V1-1U2 データシートの表示（PDF） - STMicroelectronics
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ESDALC6V1-1U2 Datasheet PDF : 11 Pages
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Characteristics
1
Characteristics
ESDALC6V1-1U2
Table 1. Absolute maximum ratings (Tamb = 25 °C)
Symbol
Parameter
Peak pulse voltage:
VPP
IEC 61000-4-2 contact discharge
PPP
Peak pulse power dissipation (8/20 µs) (1)
Tj initial = Tamb
IPP
Peak pulse current (8/20 µs)
Tj
Junction temperature
Tstg
Storage temperature range
TL
Maximum lead temperature for soldering during 10 s
Top
Operating junction temperature range
1. For a surge greater than the maximum values, the diode will fail in short-circuit
Figure 2. Electrical characteristics (definitions)
I
Value
±8
20
2
125
- 55 to +150
260
-40 to +125
Symbol
Parameter
IF
VBR
=
Breakdown voltage
VCL
=
Clamping voltage
IRM
=
Leakage current @ VRM
VRM
=
IF
=
Stand-off voltage
Forward current
VCL VBR VRM
VF
V
IRM
IPP
=
Peak pulse current
IR
IR
=
Breakdown current
VF
=
Rd
=
Forward voltage drop
Dynamic impedance
Slope = 1/Rd IPP
αT
=
Voltage temperature
Unit
kV
W
A
°C
°C
°C
°C
Table 2. Electrical characteristics (values, Tamb = 25 °C)
Symbol
Test conditions
Min.
VBR
IR = 1 mA
6.1
IRM
VRM = 3 V
Rd
Square pulse, IPP = 1 A tp = 2.5 µs
αT
ΔVBR = αT(Tamb - 25 °C) x VBR (25 °C)
Cline
VR = 0 V, Fosc = 1 MHz, Vosc = 30 mV
Typ.
1.3
12.0
Max.
8.0
100
4.5
Unit
V
nA
Ω
10-4/°C
pF
2/11
Doc ID 15089 Rev 3
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