ESDALC6V1M6 データシートの表示（PDF） - STMicroelectronics

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ESDALC6V1M6

4- and 5-line low capacitance Transil™ arrays for ESD protection

STMicroelectronics 

Characteristics

1

Characteristics

ESDALC6V1M6, ESDALC6V1-5M6

Table 1. Absolute maximum ratings (Tamb = 25° C)

Symbol

Parameter

Value Unit

ESD IEC 61000-4-2, air discharge

VPP

ESD IEC 61000-4-2, contact discharge

MIL STD 883G- Method 3015-7: class3B, (human body model)

PPP

Peak pulse power dissipation (8/20 µs)(1)

Tj initial = Tamb

Ipp

Repetitive peak pulse current typical value (8/20 µs)

Tj

Junction temperature

Tstg

Storage temperature range

TL

Maximum lead temperature for soldering during 10 s

TOP

Operating temperature range

1. For a surge greater than the maximum values, the diode will fail in short-circuit.

±15

±8

kV

25

30

W

3

A

125

°C

-55 + 150 ° C

260

°C

-40 + 125 ° C

Table 2. Electrical characteristics (Tamb = 25° C)

Symbol

Parameter

I

VRM Stand-off voltage

IF

VBR Breakdown voltage

VCL Clamping voltage

IRM Leakage current @ VRM

IPP Peak pulse current

VCL VBR VRM

VF

V

I RM

IR

αT Voltage temperature coefficient

VF Forward voltage drop

Slope= 1/ Rd

I PP

Symbol

Test Condition

Min Typ Max Unit

VBR IR = 1 mA

IRM

VRM = 3 V

VF

IF = 10 mA

Rd

αT(1) IR = 1 mA,

C

VR =0 V DC, F = 1 MHz, Vosc = 30 mVRMS

1. ΔVBR = αT * (Tamb - 25° C) * VBR (25° C)

6.1

7.2

V

70

nA

1

V

2

3

Ω

5 10-4/° C

12 15

pF

2/11

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