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RMWB04001 データシートの表示(PDF) - Raytheon Company
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コンポーネント説明
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RMWB04001
4 GHz Buffer Amplifier MMIC
Raytheon Company
RMWB04001 Datasheet PDF : 5 Pages
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RMWB04001
4 GHz Buffer Amplifier MMIC
Figure 2
Recommended
Application
Schematic
Circuit Diagram
Drain Supply
V
d
=4 V
Bond
Wires
100 pF
MMIC Chip
10,000 pF
ADVANCED INFORMATION
Output Power
Detector Voltage V
det
3 k
Ω
100 pF
100 pF
Bond
Wires
RF IN
RF OUT
Bond
Wires
100 pF
Ground
(Back of Chip)
10,000 pF
Figure 3
Recommended
Assembly Diagram
Gate Supply V
g
Note:
Detector delivers > 0.1V DC into 3k
Ω
load resistor for >20dBm output power. If output power level detection is not desired, do not connect
to detector bond pad.
Die-Attach
80Au/20Sn
Drain Supply
10,000pF V
d
= 4
100pF
3k
Ω
100pF
Output Power
Detector Voltage V
det
100pF
5mil Thick
Alumina
50-Ohm
RF
Input
5 mil Thick
Alumina
50-Ohm
RF
Output
www.raytheon.com/micro
2 mil Gap
100pF
10,000pF
Gate Supply V
g
L< 0.015”
(2 Places)
Note:
Use 0.003” by 0.0005” Gold Ribbon for bonding. RF input and output bonds should be less than 0.015” long with stress relief.
Characteristic performance data and specifications are subject to change without notice.
Revised March 14, 2001
Page 3
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
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