PDM31096SA10SO データシートの表示（PDF） - Paradigm Technology

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PDM31096SA10SO

4 Megabit 3.3V Static RAM 512K x 8-Bit

Paradigm Technology 

PRELIMINARY

PDM31096

DC Electrical Characteristics (VCC = 3.3V ± 0.3V)

Symbol Parameter

Test Conditions

ILI

Input Leakage Current

VCC = Max., VIN = VSS to VCC

ILO

Output Leakage Current VCC = Max.,

CE = VIH

VOUT = VSS to VCC

VIL

Input Low Voltage

VIH

Input High Voltage

VOL

Output Low Voltage

IOL = 8 mA, VCC = Min.

VOH

Output High Voltage

IOH = –4 mA, VCC = Min.

NOTE:1.VIL(min) = –3.0V for pulse width less than 20 ns

Min.

–5

–5

Max. Unit

5

µA

5

µA

–0.3(1)

0.8

V

2.2 Vcc+0.3 V

—

0.4

V

2.4

—

V

Power Supply Characteristics

Symbol Parameter

ICC Operating Current

CE = VIL

-8

Com’l.

230

-10

-12

-15

-20

Com’l. Com’l Ind. Com’l Ind. Com’l Ind. Unit

215 200 220 160 200 120 160 mA

f = fMAX = 1/tRC

VCC = Max.

IOUT = 0 mA

ISB Standby Current

CE = VIH

50

45

f = fMAX = 1/tRC

VCC = Max.

ISB1 Full Standby Current

CE ≥ VCC – 0.2V

10

10

f=0

VCC = Max.,

VIN ≥ VCC – 0.2V or ≤ 0.2V

NOTES: All values are maximum guaranteed values.

40 45 35 40 30 35 mA

10 15 10 15 10 15 mA

Capacitance(1) (TA = +25°C, f = 1.0 MHz)

Symbol

Parameter

Max.

Unit

CIN

COUT

Input Capacitance

Output Capacitance

8

pF

8

pF

NOTE: 1. This parameter is determined by device characterization but is not production tested.

1

2

3

4

5

6

7

8

9

10

11

12

Rev. 2.4 - 5/27/98

3

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