FDC3616N データシートの表示（PDF） - Fairchild Semiconductor
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FDC3616N Datasheet PDF : 7 Pages
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Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
WDSS
Drain-Source Avalanche Energy
Single Pulse,VDD = 50 V, ID=
3.7A
IAR
Drain-Source Avalanche Current
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA
100
244
mJ
3.7
A
V
∆BVDSS
∆TJ
IDSS
IDSS
IGSSF
IGSSR
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On Resistance
gFS
Forward Transconductance
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Gate Resistance
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
(Note 2)
ID = 250 µA, Referenced to 25°C
VDS = 80 V, VGS = 0 V
VDS = 30 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
VGS = –20 V, VDS = 0 V
114
mV/°C
10
µA
1
µA
100
nA
–100 nA
VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25°C
2 2.5
–7.4
4
V
mV/°C
VGS = 10 V, ID = 3.7 A
VGS = 6.0 V, ID = 3.5 A
VGS = 10 V, ID = 3.7 A, TJ = 125°C
VDS = 10 V, ID = 3.7 A
55
70
mΩ
58 80
104 139
19
S
VDS = 50 V, V GS = 0 V,
f = 1.0 MHz
VGS = 15 mV, f = 1.0 MHz
1215
pF
72
pF
39
pF
1.1
Ω
VDD = 50 V, ID = 1 A,
VGS = 10 V, RGEN = 6 Ω
VDS = 50 V, ID = 3.7 A,
VGS = 10 V
9
18
ns
4
8
ns
28 45
ns
10 20
ns
23
32
nC
4.8
nC
5.4
nC
FDC3616N Rev C1 (W)
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