FDD6637 データシートの表示（PDF） - Fairchild Semiconductor
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FDD6637 Datasheet PDF : 8 Pages
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Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Drain–Source Diode Characteristics
VSD
Drain–Source Diode Forward
Voltage
trr
Diode Reverse Recovery Time
Qrr
Diode Reverse Recovery Charge
VGS = 0 V, IS = –14 A (Note 2)
IF = –14 A, diF/dt = 100 A/µs
–0.8 –1.2
V
28
ns
15
nC
Notes:
1. RθJA is the sum of the junction-to-case and case -to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a)
R1iθnJA2
= 40°C/W when mounted
pad of 2 oz copper
on
a
b) RθJA = 96°C/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. Maximum current is calculated as:
PD
R DS(ON)
where PD is maximum power dissipation at T C = 25°C and RDS(on) is at T J(max) and VGS = 10V. Package current limitation is 21A
4. BV(avalanche) Single-Pulse rating is guaranteed if device is operated within the UIS SOA boundary of the device.
FDD6637 Rev. C2(W)
www.fairchildsemi.com
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