FDD6680AS データシートの表示（PDF） - Fairchild Semiconductor

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FDD6680AS

30V N-Channel PowerTrench® SyncFET™

Fairchild Semiconductor 

Typical Characteristics

VDS

VGS

RGE

L

DUT

0V

VGS tp

vary tP to obtain

required peak IAS

IAS

0.01Ω

+

VDD

-

tP

IAS

BVDSS

VDS

VDD

Figure 12. Unclamped Inductive Load Test

Circuit

Drain Current

Same type as

tAV

Figure 13. Unclamped Inductive

Waveforms

+

10V

50kΩ

-

10µF

1µF

VGS

Ig(REF

DUT

+

VDD

-

10V

VGS

QG(TOT)

QGS QGD

Charge, (nC)

Figure 14. Gate Charge Test Circuit

Figure 15. Gate Charge Waveform

VDS

VGS

RGEN

VGSPulse Width ≤ 1µs

Duty Cycle ≤ 0.1%

RL

DUT

VDS

tON

td(ON)

tr

90%

tOFF

td(OFF

)

tf

90%

+

VDD

-

0V

VGS

10%

0V

10%

10%

50%

90%

50%

Pulse Width

Figure 16. Switching Time Test

Circuit

Figure 17. Switching Time Waveforms

FDD6680AS Rev A1 (X)

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