FDM606P データシートの表示（PDF） - Fairchild Semiconductor
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FDM606P Datasheet PDF : 6 Pages
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Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Off Characteristics
BVDSS Drain to Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = -250µA, VGS = 0V
-20
VDS = -16V
VGS = 0V
-
TA=100oC
-
VGS = ±8V
-
On Characteristics
VGS(TH) Gate to Source Threshold Voltage
VGS = VDS, ID = -250µA
-0.4
ID = -6.8A, VGS = -4.5V
-
rDS(ON) Drain to Source On Resistance
ID = -3.8A, VGS = -2.5V
-
ID = -3.0A, VGS = -1.8V
-
Dynamic Characteristics
CISS
COSS
CRSS
Qg(TOT)
Qg(-2.5)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at -4.5V
Total Gate Charge at -2.5V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
-
VDS = -10V, VGS = 0V,
f = 1MHz
-
-
VGS = 0V to -4.5V
-
VGS = 0V to -2.5V
VDD = -10V
ID = -3.0A
Ig = 1.0mA
-
-
-
Switching Characteristics (VGS = -4.5V)
tON
Turn-On Time
-
td(ON) Turn-On Delay Time
-
tr
td(OFF)
Rise Time
Turn-Off Delay Time
VDD = -10V, ID = -3.0A
-
VGS = -4.5V, RGS = 6.8Ω
-
tf
Fall Time
-
tOFF
Turn-Off Time
-
Typ Max Units
-
-
V
-
-1
µA
-
-5
-
±100 nA
-0.9 -1.5
V
0.026 0.030
0.033 0.038 Ω
0.052 0.070
2200
-
pF
350
-
pF
160
-
pF
20
30
nC
12
18
nC
3.0
-
nC
3.8
-
nC
-
81
ns
9
-
ns
46
-
ns
134
-
ns
71
-
ns
-
308
ns
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Voltage
trr
Reverse Recovery Time
QRR
Reverse Recovered Charge
ISD = -6.8A
ISD = -3.0A, dISD/dt = 100A/µs
ISD = -3.0A, dISD/dt = 100A/µs
-
-0.9 -1.2
V
-
-
28
ns
-
-
20
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the center drain pad. RθJC is guaranteed by design while RθCA is determined by user’s board design.
2. RθJA is 65 oC/W (steady state) when mounted on a 1 inch2 copper pad on FR-4.
©2001 Fairchild Semiconductor Corporation
FDM606P Rev. C,
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