FDP150N10A(2011) データシートの表示（PDF） - Fairchild Semiconductor
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FDP150N10A Datasheet PDF : 9 Pages
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Package Marking and Ordering Information
Device Marking
FDP150N10A
Device
FDP150N10A_F102
Package
TO-220
Reel Size
-
Tape Width
-
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250μA, VGS = 0V
100
ID = 250μA, Referenced to 25oC
-
VDS = 80V, VGS = 0V
-
VDS = 80V, TC = 150oC
-
VGS = ±20V, VDS = 0V
-
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250μA
VGS = 10V, ID = 50A
VDS = 10V, ID = 50A
2.0
-
(Note 4)
-
Dynamic Characteristics
Ciss
Coss
Crss
Coss(er)
Qg(tot)
Qgs
Qgs2
Qgd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Engry Related Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
Equivalent Series Resistance (G-S)
-
VDS = 50V, VGS = 0V
f = 1MHz
-
-
VDS = 50V, VGS = 0V
-
-
VDS = 50V, VGS = 10V
-
ID = 50A
-
(Note 4, 5)
-
Drain Open, f = 1MHz
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
-
VDD = 50V, ID = 50A
-
VGS = 10V, RGEN = 4.7Ω
-
(Note 4, 5)
-
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 50A
-
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, VDD = 50V, ISD = 50A
-
dIF/dt = 100A/μs
(Note 4)
-
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 2mH, IAS = 9.2A, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 100A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300μs, Dual Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Typ.
-
0.08
-
-
-
-
12.5
40
1080
267
11
436
16.2
5.3
2.6
3.7
1.3
13
16
21
5
-
-
-
50
55
Quantity
50
Max. Units
-
-
1
500
±100
V
V/oC
μA
nA
4.0
V
15.0 mΩ
-
S
1440 pF
355 pF
-
pF
-
pF
21.0 nC
-
nC
-
nC
-
nC
-
Ω
36
ns
42
ns
52
ns
20
ns
50
A
200
A
1.3
V
-
ns
-
nC
FDP150N10A_F102 Rev. A1
2
www.fairchildsemi.com
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