FDS8962C データシートの表示（PDF） - Fairchild Semiconductor

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FDS8962C

Dual N & P-Channel PowerTrench® MOSFET

Fairchild Semiconductor 

June 2006

FDS8962C

Dual N & P-Channel PowerTrench® MOSFET

Features

■ Q1: N-Channel

7.0A, 30V RDS(on) = 0.030Ω @ VGS = 10V

RDS(on) = 0.044Ω @ VGS = 4.5V

■ Q2: P-Channel

-5A, -30V RDS(on) = 0.052Ω @ VGS = -10V

RDS(on) = 0.080Ω @ VGS = -4.5V

■ Fast switching speed

■ High power and handling capability in a widely used surface

mount package

General Description

These dual N- and P-Channel enhancement mode power field

effect transistors are produced using Fairchild Semiconductor’s

advanced PowerTrench process that has been especially

tailored to minimize on-state ressitance and yet maintain

superior switching performance.

These devices are well suited for low voltage and battery

powered applications where low in-line power loss and fast

switching are required.

D2

D2

D1

D1

SO-8

Pin 1

G2

S2

S1G1

Q2

5

4

6

3

Q1

7

2

8

1

Absolute Maximum Ratings TA = 25°C unless otherwise noted

Symbol

Parameter

Q1

Q2

VDSS

VGSS

ID

Drain-Source Voltage

Gate-Source Voltage

Drain Current – Continuous

– Pulsed

(Note 1a)

PD

Power Dissipation for Dual Operation

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

(Note 1c)

TJ, TSTG Operating and Storage Junction Temperature Range

Thermal Characteristics

R θ JA

RθJC

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

30

-30

±20

±20

7

-5

20

-20

2

1.6

1

0.9

-55 to +150

78

40

Package Marking and Ordering Information

Device Marking

FDS8962C

Device

FDS8962C

Reel Size

13”

Tape width

12mm

Units

V

V

A

W

°C

°C/W

°C/W

Quantity

2500 units

©2005 Fairchild Semiconductor Corporation

1

FDS8962C Rev. A1

www.fairchildsemi.com

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