FDS8962C データシートの表示（PDF） - Fairchild Semiconductor
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FDS8962C Datasheet PDF : 8 Pages
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Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA
Q1
VGS = 0 V, ID = -250 µA
Q2
∆BVDSS Breakdown Voltage Temperature ID = 250 µA, Referenced to 25°C
Q1
∆TJ
Coefficient
ID = -250 µA, Referenced to 25°C
Q2
IDSS
Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V
Q1
VDS = -24 V, VGS = 0 V
Q2
IGSSF
Gate-Body Leakage, Forward
VGS = 20 V, VDS = 0 V
All
IGSSR
Gate-Body Leakage, Reverse
VGS = -20 V, VDS = 0 V
All
On Characteristics (Note 2)
VGS(th)
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
ID(on)
On-State Drain Current
gFS
Forward Transconductance
Dynamic Characteristics
VDS = VGS, ID = 250 µA
Q1
VDS = VGS, ID = -250 µA
Q2
ID = 250 µA, Referenced to 25°C
Q1
ID = -250 µA, Referenced to 25°C
Q2
VGS = 10 V, ID = 7 A
Q1
VGS = 10 V, ID = 7 A, TJ = 125°C
VGS = 4.5 V, ID = 6 A
VGS = -10 V, ID = -5 A
Q2
VGS = -10 V, ID = -5 A, TJ = 125°C
VGS = -4.5 V, ID = -4 A
VGS = 10 V, VDS = 5 V
Q1
VGS = -10 V, VDS = -5 V
Q2
VDS = 5 V, ID = 7 A
Q1
VDS = -5 V, ID =-5 A
Q2
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q1
Q1
VDS = 15 V, VGS = 0 V, f = 1.0 MHz Q2
Q1
Q2
Q2
VDS = -15 V, VGS = 0 V, f = 1.0 MHz
Q1
Q2
RG
Gate Resistance
VGS = 15 mV, f = 1.0 MHz
Q1
Q2
Switching Characteristics (Note 2)
td(on)
Turn-On Delay Time
Q1
Q1
VDD = 15 V, ID = 1 A,
Q2
tr
Turn-On Rise Time
VGS = 10V, RGEN = 6 Ω
Q1
Q2
Q2
td(off)
Turn-Off Delay Time
VDD = -15 V, ID = -1 A,
Q1
VGS = -10V, RGEN = 6 Ω
Q2
tf
Turn-Off Fall Time
Q1
Q2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Q1
Q1
VDS = 15 V, ID = 7 A, VGS = 10 V
Q2
Q1
Q2
Q2
VDS = -15 V, ID = -5 A,VGS = -10 V
Q1
Q2
Min
30
-30
1
-1
20
-20
Typ
25
-23
1.9
-1.7
-4.5
4.5
21
29
26
42
57
65
25
10
575
528
145
132
65
70
2.1
6.0
8
7
5
13
23
14
3
9
10.7
9.6
1.7
2.2
2.1
1.7
Max Units
V
mV/°C
1
µA
-1
100
nA
-100
nA
3
V
-3
mV/°C
30
mΩ
46
44
52
78
80
A
S
pF
pF
pF
Ω
16
ns
14
10
ns
24
37
ns
25
6
ns
17
26
nC
13
nC
nC
FDS8962C Rev. A1
2
www.fairchildsemi.com
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