FDD6N50FTF データシートの表示（PDF） - Fairchild Semiconductor
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FDD6N50FTF Datasheet PDF : 9 Pages
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Typical Performance Characteristics
Figure 1. On-Region Characteristics
28 VGS = 10.0 V
8.0 V
10
7.0 V
6.5 V
6.0 V
5.5 V
1
Figure 2. Transfer Characteristics
20
10
150oC
25oC
0.1
0.04
0.1
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
1
10 20
VDS,Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
2.4
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
1
5
6
7
8
9
10
VGS,Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
100
1.8
VGS = 10V
1.2
VGS = 20V
0.6
0
*Note: TJ = 25oC
4
8
12
16
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
1500
1200
Coss
Ciss
900
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
*Note:
1. VGS = 0V
2. f = 1MHz
600
Crss
300
0
0.1
1
10
30
VDS, Drain-Source Voltage [V]
10
150oC
25oC
1
0.1
0.0
*Notes:
1. VGS = 0V
2. 250μs Pulse Test
0.5
1.0
1.5
2.0
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
VDS = 100V
8
VDS = 250V
VDS = 400V
6
4
2
*Note: ID = 6A
0
0
4
8
12
16
Qg, Total Gate Charge [nC]
FDD6N50F / FDU6N50F Rev. A
3
www.fairchildsemi.com
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