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FES8HT データシートの表示(PDF) - General Semiconductor

部品番号
コンポーネント説明
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FES8HT
GE
General Semiconductor GE
FES8HT Datasheet PDF : 2 Pages
1 2
RATINGS AND CHARACTERISTIC CURVES FES8AT THRU FES8JT
FIG. 1 - MAXIMUM FORWARD CURRENT
DERATING CURVES
10
RESISTIVE OR
INDUCTIVE LOAD
HEATSINK, CASE TEMPERATURE, TC
8.0
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
150
125
TC=100°C
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
100
6.0
75
4.0
FREE AIR, AMBIENT, TEMPERATURE TA
50
2.0
25
0
0
50
100
150
AMBIENT TEMPERATURE, °C
0
1
10
100
NUMBER OF CYCLES AT 60 HZ
FIG. 3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
40
TJ=125°C
10
TJ=25°C
1.0
PULSE WIDTH=300µs
50 - 200V
1% DUTY CYCLE
300 - 400V
500 - 600V
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
1,000
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
TJ=25°C
f=1.0 MHz
Vsig=50mVp-p
100
FIG. 4 - TYPICAL REVERSE LEAKAGE
CHARACTERISTICS
100
10
TJ=125°C
TJ=100°C
1
0.1
0.01
0
TJ=25°C
50-400V
500-600V
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE
VOLTAGE, %
50 - 400V
500 - 600V
10
0.1
1
10
100
REVERSE VOLTAGE, VOLTS

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